Antireflective hardmask and uses thereof
US7648820B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2006 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Mar 19, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/151
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.