Method of pattern formation in semiconductor fabrication
US7648918B2 · kind B2 · utility
3Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2007 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Feb 25, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of fabricating a semiconductor device. The method includes providing a substrate, forming a photo acid generator (PAG) layer on the substrate, exposing the PAG layer to radiation, and forming a photoresist layer on the exposed PAG layer. The exposed PAG layer generates an acid. The acid decomposes a portion of the formed photoresist layer. In one embodiment, the PAG layer includes organic BARC. The decomposed portion of the photoresist layer may be used as a masking element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.