Advanced exposure techniques for programmable lithography
US7649615B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2007 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | May 2, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70291
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Advanced techniques for programmable photolithography provide enhanced resolution and can image features smaller than the single shutter intensity profile, i.e., sub-pixel resolution. Patterns are built up by multiple exposures with relative movement of the mask and resist so as to place each shape from the library where it is needed on the resist. Electro-Optic phase shifting material may be applied to the shutter so as to adjust the single shutter intensity profile, or to adjust the interaction of adjacent shutters. An apodizing mask may be used to engineer the wavefronts of the light striking the resist to achieve better resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.