Integrated circuit with metal heat flow path coupled to transistor and method for manufacturing such circuit
US7651897B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2007 |
| Grant date | Jan 26, 2010 |
| Priority date | — |
| Expiry date | Oct 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a chip with a metal heat flow path extending between a terminal of a transistor thereof and bulk semiconductor material of the chip (e.g., from the terminal to a substrate over which the transistor is formed or to the body of a semiconductor device adjacent to the transistor). The chip can be implemented by a semiconductor on insulator (SOI) process and can include at least one bipolar or MOS transistor, an insulator underlying the transistor, a semiconductor substrate underlying the insulator, and a metal heat flow path extending between a terminal of the transistor through the insulator to the substrate. Preferably, the metal heat flow path is a metal interconnect formed by a process step (or steps) of the same type performed to produce other metal interconnects of the chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.