Method for forming transistor of semiconductor device
US7651923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2007 |
| Grant date | Jan 26, 2010 |
| Priority date | — |
| Expiry date | Mar 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a transistor of a semiconductor device, includes forming a trench by etching a semiconductor substrate on which a pad oxide film and a pad nitride film are sequentially formed; forming a isolation oxide film by filling the trench with oxide; removing an upper portion of the isolation oxide film until an upper lateral portion of the semiconductor substrate is exposed; forming a barrier nitride film over the isolation oxide film, the semiconductor substrate, and the pad nitride film; forming a sacrificial oxide film over the barrier nitride film; performing a planarization process until the pad nitride film is exposed; performing a wet etching process until the active region is exposed; forming a photoresist pattern over the active region and the barrier nitride film; and performing a dry etching process by using the photoresist pattern as an etching mask, thereby forming a recessed gate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.