Method for forming silazane-based dielectric film
US7651959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2007 |
| Grant date | Jan 26, 2010 |
| Priority date | — |
| Expiry date | Jan 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02326
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.