Patent · US Active

Plasma-based debris mitigation for extreme ultraviolet (EUV) light source

US7652272B2 · kind B2 · utility

7Cited by
15References
32Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 12, 2007
Grant dateJan 26, 2010
Priority date—
Expiry dateFeb 14, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/022
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.