Deep trench contact and isolation of buried photodetectors
US7652313B2 · kind B2 · utility
15Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2005 |
| Grant date | Jan 26, 2010 |
| Priority date | — |
| Expiry date | May 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
The invention provides vertically-stacked photodiodes buried in a semiconductor material that are isolated and selectively contacted by deep trenches. One embodiment of the invention provides a pixel sensor comprising: a plurality of photosensitive elements formed in a substrate, each photosensitive element being adapted to generate photocharges in response to electromagnetic radiation; and a plurality of photocharge transfer devices, each photocharge transfer device being coupled to at least one of the plurality of photosensitive elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.