Semiconductor device and method of manufacturing the same
US7652328B2 · kind B2 · utility
29Cited by
7References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2007 |
| Grant date | Jan 26, 2010 |
| Priority date | — |
| Expiry date | Aug 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an isolation region, a semiconductor element region defined by the isolation region, and having a channel forming portion and a recessed portion, the recessed portion being formed between the isolation region and the channel forming portion, and an epitaxial semiconductor portion formed in the recessed portion, wherein the semiconductor element region has a wall portion between the isolation region and the epitaxial semiconductor portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.