Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrode
US7655519B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2005 |
| Grant date | Feb 2, 2010 |
| Priority date | — |
| Expiry date | Mar 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal-insulator-metal (MIM) capacitor includes a lower electrode, a dielectric layer, and an upper electrode. The lower electrode includes a first conductive layer, a chemical barrier layer on the first conductive layer, and a second conductive layer on the chemical barrier layer. The chemical barrier layer is between the first and second conductive layers and is a different material than the first and second conductive layers. The dielectric layer is on the lower electrode. The upper electrode is on the dielectric layer opposite to the lower electrode. The first and second conductive layers can have the same thickness. The chemical barrier layer can be thinner than each of the first and second conductive layers. Related methods are discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.