In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability
US7655555B2 · kind B2 · utility
5Cited by
16References
11Claims
0Family size
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Key dates
| Filing date | Jun 28, 2001 |
| Grant date | Feb 2, 2010 |
| Priority date | — |
| Expiry date | Oct 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A copper interconnect having a transition metal-silicon-nitride barrier (106). A transition metal-nitride is co-deposited with Si by reactive sputtering in a Si containing ambient to form barrier (106). The copper (110) is then deposited over the transition metal-silicon-nitride barrier (108) with good adhesion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.