InN/InP/TiO2 photosensitized electrode
US7655575B2 · kind B2 · utility
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16Claims
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Assignee
Inventors
Key dates
| Filing date | Oct 25, 2006 |
| Grant date | Feb 2, 2010 |
| Priority date | — |
| Expiry date | May 21, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/542
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention is a photosensitized electrode which absorbs sunlight to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.