Method for fabricating a solid electrolyte memory device and solid electrolyte memory device

US7658773B2 · kind B2 · utility

Assignees

• Qimonda AG · DE
• Altis Semiconductor, SNC · FR

Inventor

• Cay-Uwe Pinnow · Birkenfeld, DE

Key dates

• Filing date: Sep 29, 2006
• Grant date: Feb 9, 2010
• Expiry date: Aug 19, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/826

Abstract

A method for fabricating a solid electrolyte memory device comprises a plurality of solid electrolyte memory cells, the solid electrolyte memory cells sharing a common continuous solid electrolyte layer comprising solid electrolyte cell areas and solid electrolyte inter-cell areas, the method comprising the process of introducing mobile ion solubility reducing material or mobile ion mobility reducing material into the solid electrolyte inter-cell areas.