Altis Semiconductor, SNC
34Patents
32Active
34Granted
54Portfolio score
Filing activity: Apr 29, 2005 → Jul 7, 2008 · 30 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7751163B2 | Electric device protection circuit and method for protecting an electric device | Electricity | 54 | Active |
| US7682841B2 | Method of forming integrated circuit having a magnetic tunnel junction device | Emerging Cross-Sectional Technologies | 48 | Active |
| US7838861B2 | Integrated circuits; methods for manufacturing an integrated circuit and memory module | Electricity | 47 | Active |
| US7658773B2 | Method for fabricating a solid electrolyte memory device and solid electrolyte memory device | Electricity | 43 | Active |
| US7515454B2 | CBRAM cell and CBRAM array, and method of operating thereof | Electricity | 37 | Active |
| US7643332B2 | MRAM cell using multiple axes magnetization and method of operation | Electricity | 28 | Active |
| US7697322B2 | Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module | Electricity | 27 | Active |
| US7660151B2 | Method for programming an integrated circuit, method for programming a plurality of cells, integrated circuit, cell arrangement | Physics | 22 | Active |
| US8665629B2 | Condensed memory cell structure using a FinFET | Electricity | 21 | Active |
| US7855435B2 | Integrated circuit, method of manufacturing an integrated circuit, and memory module | Physics | 20 | Active |
| US7706201B2 | Integrated circuit with Resistivity changing memory cells and methods of operating the same | Physics | 13 | Active |
| US7313043B2 | Magnetic Memory Array | Physics | 11 | Expired |
| US7903454B2 | Integrated circuit, memory cell array, memory module, and method of operating an integrated circuit | Physics | 9 | Active |
| US8115282B2 | Memory cell device and method of manufacture | Electricity | 8 | Active |
| US7706176B2 | Integrated circuit, cell arrangement, method for manufacturing an integrated circuit and for reading a memory cell status, memory module | Electricity | 7 | Active |
| US7630231B2 | Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell | Physics | 7 | Active |
| US8310866B2 | MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations | Electricity | 7 | Active |
| US7532506B2 | Integrated circuit, cell arrangement, method of operating an integrated circuit, memory module | Physics | 5 | Active |
| US7755936B2 | Integrated circuits, cell, cell arrangement, method of reading a cell, memory module | Physics | 5 | Active |
| US7602032B2 | Memory having cap structure for magnetoresistive junction and method for structuring the same | Electricity | 4 | Active |
| US7697313B2 | Integrated circuit, memory cell, memory module, method of operating an integrated circuit, and method of manufacturing a memory cell | Electricity | 3 | Active |
| US7583527B2 | Tunable resistor and method for operating a tunable resistor | Electricity | 3 | Active |
| US7602637B2 | Integrated circuits; methods for operating an integrating circuit; memory modules | Electricity | 3 | Active |
| US7903452B2 | Magnetoresistive memory cell | Physics | 3 | Active |
| US7830709B2 | Integrated circuit, method of reading data stored within a memory device of an integrated circuit, method of writing data into a memory device of an integrated circuit, memory module, and computer program | Physics | 2 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.