High resolution silicon-containing resist
US7659050B2 · kind B2 · utility
1Cited by
12References
12Claims
0Family size
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Key dates
| Filing date | Jun 7, 2005 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Jan 13, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0046
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Non-chemically amplified radiation sensitive resist compositions containing silicon are especially useful for lithographic applications, especially E-beam lithography. More particularly, radiation-sensitive resist compositions comprising a polymer having at least one silicon-containing moiety and at least one radiation-sensitive moiety cleavable upon radiation exposure to form aqueous base soluble moiety can be used to pattern sub-50 nm features with little or no blur.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.