Electrical open/short contact alignment structure for active region vs. gate region
US7659733B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2006 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Feb 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus for measuring a structural characteristic between a polysilicon shape and a silicon area. The apparatus for measuring a structural characteristic between a polysilicon shape and a silicon area comprises the silicon area, and a plurality of polysilicon shapes each having a unique orientation relative to the silicon area wherein each of the polysilicon shapes is formed having an angle less than or equal to a critical angle. The critical angle is an angle at or below which a sidewall spacer no longer is formed on a polysilicon shape, thereby causing the polysilicon shape to short circuit to an underlying portion of the silicon area by way of a silicide bridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.