Method of making non-volatile memory cell with embedded antifuse
US7660181B2 · kind B2 · utility
48Cited by
54References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2007 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Jun 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/122
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of making a nonvolatile memory device includes forming a first electrode, forming at least one nonvolatile memory cell comprising a first diode portion, a second diode portion and an antifuse separating the first diode portion from the second diode portion, and forming a second electrode over the at least one nonvolatile memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.