Inventor · Pleasanton, CA, US

Tanmay Kumar

88Patents
16h-index
67Co-inventors
87Inventor score

Filing activity: Apr 26, 2000 → Jan 22, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US7915164B2 Method for forming doped polysilicon via connecting polysilicon layers Electricity 243 Active
US7566974B2 Doped polysilicon via connecting polysilicon layers Electricity 181 Expired
US7875871B2 Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride Electricity 109 Active
US8227787B2 Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride Electricity 101 Active
US7830698B2 Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same Physics 66 Active
US8658476B1 Low temperature P+ polycrystalline silicon material for non-volatile memory device Electricity 63 Active
US7660181B2 Method of making non-volatile memory cell with embedded antifuse Electricity 48 Active
US7054219B1 Transistor layout configuration for tight-pitched memory array lines Electricity 47 Expired
US6306718A Method of making polysilicon resistor having adjustable temperature coefficients Electricity 41 Expired
US7812404B2 Nonvolatile memory cell comprising a diode and a resistance-switching material Electricity 40 Expired
US8946673B1 Resistive switching device structure with improved data retention for non-volatile memory device and method Electricity 25 Active
US7495947B2 Reverse bias trim operations in non-volatile memory Physics 18 Active
US7719874B2 Systems for controlled pulse operations in non-volatile memory Physics 17 Active
US7800933B2 Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance Physics 17 Active
US9806256B1 Resistive memory device having sidewall spacer electrode and method of making thereof Physics 16 Active
US9805794B1 Enhanced erasing of two-terminal memory Physics 16 Active
US8062918B2 Surface treatment to improve resistive-switching characteristics Electricity 14 Active
US7897453B2 Dual insulating layer diode with asymmetric interface state and method of fabrication Electricity 13 Active
US8971088B1 Multi-level cell operation using zinc oxide switching material in non-volatile memory device Physics 13 Active
US7492630B2 Systems for reverse bias trim operations in non-volatile memory Physics 12 Active
US8674724B2 Field programmable gate array utilizing two-terminal non-volatile memory Electricity 12 Active
US8754671B2 Field programmable gate array utilizing two-terminal non-volatile memory Electricity 11 Active
US7800934B2 Programming methods to increase window for reverse write 3D cell Physics 11 Active
US7944728B2 Programming a memory cell with a diode in series by applying reverse bias Physics 10 Active
US8659929B2 Amorphous silicon RRAM with non-linear device and operation Physics 10 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.