Nitride-based semiconductor substrate and method of making the same
US7662488B2 · kind B2 · utility
2Cited by
4References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 21, 2006 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Sep 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride-based semiconductor substrate having a diameter of 25 mm or more, a thickness of 250 micrometers or more, and an optical absorption coefficient of less than 7 cm−1 to light with a wavelength of 380 nm or more. The nitride-based semiconductor substrate is made by the HVPE method that uses gallium chloride obtained by reacting a Ga melt with a hydrogen chloride gas. The Ga melt is contacted with the hydrogen chloride gas for one minute or more to produce the gallium chloride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.