Method of processing wafer
US7662666B2 · kind B2 · utility
4Cited by
19References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 28, 2007 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Feb 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01082
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An underfill material is provided on the surface of a wafer in such a manner as to cover bumps, then the wafer is irradiated with a laser beam from the surface thereof and along planned cutting lines so as to remove an insulation layer and the underfill material present over the planned cutting lines, and the debris generated in this instance are deposited on the underfill material and are thereby prevented from being deposited on the wafer surface and/or on the bumps. Subsequently, a surface layer of the underfill material is cut so as to make the bumps flush in height and to expose the tips of the bumps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.