Semiconductor device and method for manufacturing the same
US7662671B2 · kind B2 · utility
19Cited by
6References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 14, 2006 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Apr 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is disclosed, which includes at least the steps of preparing a laminated structure including a single chip or a plurality of chips, and dividing the laminated structure into a plurality of sub-laminated structures. A laminated structure comprised of a silicon substrate and a single chip or a plurality of chips laminated on the silicon substrate is formed. Then, the laminated structure is divided into a plurality of sub-laminated structures. Each of the sub-laminated structures includes a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.