Method of forming a more highly-oriented silicon layer and substrate having the same
US7662678B2 · kind B2 · utility
4Cited by
1References
27Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 23, 2006 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Feb 1, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K2323/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3 layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3 layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.