Method of preparing a semiconductor substrate utilizing plural implants under an isolation region to isolate adjacent wells
US7662690B2 · kind B2 · utility
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3References
12Claims
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Key dates
| Filing date | Jan 31, 2006 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Oct 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Multiple blanket implantations of one or more p type dopants into a semiconductor substrate are performed to facilitate isolation between nwell regions subsequently formed in the substrate. The blanket implantations are performed through isolation regions in the substrate so that the p type dopants are implanted to depths sufficient to separate the nwell regions. This increased concentration of p type dopants helps to mitigate leakage between the nwell regions as the nwell regions are brought closer together to increase packing densities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.