Magneto-resistance effect element and magnetic memory
US7663171B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2005 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Jan 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3281
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.