Non-volatile memory cell with poly filled trench as control gate and fully isolated substrate as charge storage

US7663173B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Saurabh Desai · Fremont, US
• Natasha Lavrovskaya · Sunnyvale, US
• Yuri Mirgorodski · San Jose, US
• Jeff Babcock · Sunnyvale, US

Key dates

• Filing date: Jan 12, 2007
• Grant date: Feb 16, 2010
• Expiry date: Aug 31, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

In a non-volatile memory cell, charge is stored in a fully isolated substrate or floating bulk that forms a storage capacitor with a first poly strip and includes a second poly strip defining a read gate and a poly-filled trench defining a control gate.