Jeff Babcock
10Patents
6h-index
21Co-inventors
66Inventor score
Filing activity: Feb 6, 2001 → Oct 29, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7061057B2 | Laterally diffused MOS transistor having N+ source contact to N-doped substrate | Electricity | 27 | Expired |
| US7307314B2 | LDMOS transistor with improved gate shield | Electricity | 10 | Expired |
| US7663173B1 | Non-volatile memory cell with poly filled trench as control gate and fully isolated substrate as charge storage | Electricity | 8 | Active |
| US8247862B2 | Method of enhancing charge storage in an E2PROM cell | Electricity | 7 | Active |
| US6759592B1 | Kaolin additive in mineral insulated metal sheathed cables | Electricity | 7 | Expired |
| US7719048B1 | Heating element for enhanced E2PROM | Electricity | 7 | Active |
| USRE42403E1 | Laterally diffused MOS transistor having N+ source contact to N-doped substrate | General | 5 | Active |
| US7572708B1 | Utilization of doped glass on the sidewall of the emitter window in a bipolar transistor structure | Electricity | 2 | Active |
| US7808034B1 | Non-volatile memory cell with fully isolated substrate as charge storage | Electricity | 0 | Active |
| US11955530B2 | RF MOS varactor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.