Non-volatile memory device and fabricating method thereof
US7663177B2 · kind B2 · utility
4Cited by
3References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 12, 2005 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Oct 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A non-volatile memory device and fabricating method thereof are provided. In the deposition to form a tunneling dielectric layer, a composite charge trapping layer and a block dielectric layer, an ingredient of a depositing material or the depositing material is adjusted to form a grading energy level structure, such that carriers are trapped or erased more easily in accordance with a variation in grading energy level. Therefore, the carriers are stored more effectively and the probability that the electric leakage occurs is reduced substantially.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.