Wafer level package and manufacturing method thereof
US7663250B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2008 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Sep 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer level package and a manufacturing method thereof capable of reducing stress between an under bump metal and a bump. The wafer level package includes a substrate provided with a plurality of chip pads on a top surface; a first passivation layer to expose the chip pads; vias connected to the chip pads by passing through the first passivation layer; a metal wiring layer formed on the first passivation layer and connected to the vias; an under bump metal formed on the first passivation layer to be connected to the metal wiring layer and having a buffer pattern separated through a trench on a center; a second passivation layer formed on the first passivation layer to expose the under bump metal; a first bump formed on the buffer pattern; and a second bump filling the trench and formed on the first bump and the under bump metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.