Heat treatment apparatus and methods for thermally processing a substrate using a pressurized gaseous environment
US7665917B2 · kind B2 · utility
3Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Mar 30, 2007 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | Apr 24, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Apparatus and methods for heating a substrate in a pressurized environment inside of a thermal processing system. The substrate is placed in a gaseous environment inside a processing chamber of the thermal processing system. The substrate is supported in the gaseous environment. The gas pressure inside the processing chamber is increased above atmospheric pressure, which increases the temperature of the gaseous environment. Heat is transferred from the pressurized gaseous environment to the substrate for thermally processing a layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.