Non-volatile memory devices including fuse covered field regions
US7666717B2 · kind B2 · utility
1Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2006 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | Jan 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse. An isolation layer is configured to isolate the field regions. A fuse insulating layer is interposed between the at least one fuse and the field regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.