Bipolar device having improved capacitance
US7666750B2 · kind B2 · utility
0Cited by
15References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2006 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | Dec 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant concentration of the collector by at least about 0.9 microns. The invention also provides a method for forming this device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.