Patent · US Active

Deposition method for a transition-metal-containing dielectric

US7666752B2 · kind B2 · utility

12Cited by

1References

9Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Stephan Kudelka · Radeberg, DE
Lars Oberbeck · Dresden, DE
Uwe Schroeder · Fishkill, US
Tim Boescke · Dresden, DE
Johannes Heitmann · Dresden, DE
Annette Saenger · Dresden, DE
Joerg Schumann · Dresden, DE
Elke Erben · Dresden, DE

Key dates

Filing date	Jan 19, 2007
Grant date	Feb 23, 2010
Priority date	—
Expiry date	Feb 8, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10B12/033
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.