Semiconductor device and manufacturing method thereof
US7666761B2 · kind B2 · utility
0Cited by
7References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 1, 2007 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | Jul 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/304
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against metallic contamination that generated after backside grinding in assembly processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.