Method for forming a group III nitride material on a silicon substrate
US7666765B2 · kind B2 · utility
8Cited by
6References
30Claims
0Family size
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Key dates
| Filing date | Mar 23, 2007 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | May 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0.01 μmol/cm2 of one or more organometallic compounds containing Al, in a flow of less than 5 μmol/min. The preferred embodiments are equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.