Method and arrangement for contacting terminals

US7666783B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Klaus Goller · Dresden, DE
• Alexander Reb · Dresden, DE
• Grit Schwalbe · Dresden, DE

Key dates

• Filing date: Nov 16, 2007
• Grant date: Feb 23, 2010
• Expiry date: May 22, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a method of contacting terminals, a substrate having a first terminal and a second terminal is provided, a terminal surface of the first terminal being located at a shorter distance from a substrate surface than a surface of the second terminal. A first insulating layer, in which a contact via is formed for exposing the terminal surface of the first terminal, is formed on the substrate surface. The contact via is filled with a conductive material, and a second insulating layer is formed on the first insulating layer and on the contact via filled with the conductive material. Using an etching mask, a first recess for exposing the conductive material filling the contact via, and a second recess are etched through the second and first insulating layers for exposing the second terminal surface. A conductive material for producing first and second contact terminals is introduced into the first and second recesses. This is to achieve that the second terminal is contacted in the production of the second contact terminal.