Pattern generation method and charged particle beam writing apparatus
US7669174B2 · kind B2 · utility
6Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2007 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | Feb 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31764
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A pattern generation method includes changing a dimension of a pattern included in each mesh-like region of a plurality of mesh-like regions by using an area of the pattern and a total sum of lengths of circumferential sides of the pattern included in each mesh-like region to correct a dimension error of the pattern, wherein the dimension error being caused by loading effects and the plurality of mesh-like regions being virtually divided from a pattern forming region of a target object, and generating a pattern of the dimension changed on the target object.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.