Structure and method for fabrication JFET in CMOS

US7670889B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• John J. Pekarik · Underhill, US
• Richard A. Phelps · Colchester, US
• Robert M. Rassel · Colchester, US
• Yun Shi · South Burlington, US

Key dates

• Filing date: Jun 4, 2008
• Grant date: Mar 2, 2010
• Expiry date: Jun 4, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0512

Abstract

A design structure, and more particularly, to a design structure for manufacturing a JFET in SOI, a JFET and methods of manufacturing the JFET are provided. The JFET includes a gate poly formed directly on an SOI layer and a gate oxide layer interposed between outer edges of the gate poly and the SOI layer.