Semiconductor device having impurity-doped resistor element
US7670918B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2008 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Mar 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Resistor elements are formed by doping impurity into a single crystal film formed on a substrate such as a silicon-on-insulator substrate. A semiconductor device having such resistor elements is used as a detector for detecting an amount of airflow, for example. The impurity density in the single crystal silicon is made lower than 1×1020/cm3 to suppress a resistance change by aging especially at a temperature higher than 310° C. To obtain a high temperature coefficient of the resistor element as well as a low resistance change by aging, the impurity density is set in a range from 4×1019/cm3 to 1×1020/cm3, and more preferably in a range from 7×1019/cm3 to 1×1020/cm3. As the impurity, N-type impurity such as phosphorus or P-type impurity such as boron may be used. It is preferable to use the impurity having a low diffusion coefficient to attain a low resistance change by aging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.