Methods and apparatus for forming a polysilicon capacitor

US7670920B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Byron Lovell Williams · Plano, US
• Maxwell Lippitt · Satellite Beach, US
• C. Matthew Thompson · Meadowlark Drive, US

Key dates

• Filing date: Apr 9, 2007
• Grant date: Mar 2, 2010
• Expiry date: Apr 14, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

An embodiment relates generally to a method of forming a capacitor. The method includes depositing a first layer of polysilicon on a substrate and implanting a high dose of implant into the first layer of polysilicon. The method also includes depositing a layer of dielectric over the first layer of polysilicon and depositing a second layer of polysilicon over the layer of dielectric. The method further includes implanting an equivalent concentration of implant in both the first layer of polysilicon into the second layer of polysilicon.