Maxwell Lippitt
12Patents
2h-index
18Co-inventors
51Inventor score
Filing activity: Apr 23, 1991 → Jan 23, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5235205A | Laser trimmed integrated circuit | Electricity | 37 | Expired |
| US5096850A | Method of laser trimming | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7902033B2 | Methods and devices for a high-k stacked capacitor | Electricity | 2 | Active |
| US7670920B2 | Methods and apparatus for forming a polysilicon capacitor | Electricity | 1 | Active |
| US9917009B2 | Methods of forming a through-substrate-via (TSV) and a metallization layer after formation of a semiconductor device | Electricity | 1 | Active |
| US10446443B2 | Integrated circuit product having a through-substrate-via (TSV) and a metallization layer that are formed after formation of a semiconductor device | Electricity | 0 | Active |
| US8431463B2 | Capacitor contact formed concurrently with bond pad metallization | Electricity | 0 | Active |
| US7250356B2 | Method for forming metal silicide regions in an integrated circuit | Electricity | 0 | Expired |
| US8497565B2 | Multiple electrode layer backend stacked capacitor | Electricity | 0 | Active |
| US7033931B2 | Temperature optimization of a physical vapor deposition process to prevent extrusion into openings | Electricity | 0 | Expired |
| US6010828A | Method of and device for planarizing a surface of a semiconductor wafer | Physics | 0 | Expired |
| US7800226B2 | Integrated circuit with metal silicide regions | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.