Method of measuring alignment of measurement pattern
US7670922B2 · kind B2 · utility
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2References
11Claims
0Family size
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Key dates
| Filing date | Jul 6, 2006 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | May 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A resist pattern for alignment measurement being shrunk by a heat flow includes a plurality of positive type or negative type line patterns. Widths of spaces between the line patterns are greater than twice those of the line patterns. Alternatively, the resist pattern comprises a box-shaped or slit-shaped measurement pattern and a pair of box-shaped or slit-shaped auxiliary patterns provided inside and outside the measurement pattern, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.