Semiconductor device and method for manufacture
US7671390B2 · kind B2 · utility
7Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 2005 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Dec 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is formed with a lower field plate (32) and optional lateral field plates (34) around semiconductor (20) in which devices are formed, for example power FETs or other transistor or diode types. The semiconductor device is manufactured by forming trenches with insulated sidewalls, etching cavities (26) at the base of the trenches which join up and then filling the trenches with conductor (30).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.