Design and fabrication of rugged FRED, power MOSFET or IGBT
US7671410B2 · kind B2 · utility
6Cited by
11References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2006 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Jan 23, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/927
Abstract
An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the reverse direction. The main PN junction has an avalanche voltage equal to or lower than an avalanche voltage of the peripheral field spreading region so substantially the entire said main PN junction participates in avalanche conduction. This rugged FRED structure can also be formed in MOSFETS, IGBTS and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.