Lateral field-effect transistor having an insulated trench gate electrode

US7671440B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Raymond J. E. Hueting · Helmond, NL
• Erwin Hijzen · Eindhoven, NL

Key dates

• Filing date: Jun 10, 2004
• Grant date: Mar 2, 2010
• Expiry date: Jul 3, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A field-effect transistor having cells (18) each having a source region (22), source body region (26), drift region (20), drain body region (28) and drain region (24) arranged longitudinally, laterally alternating with structures to achieve a reduced surface field. In embodiments, the structures can include longitudinally spaced insulated gate trenches (35) defining a gate region (31) adjacent the source or drain region (22, 24) and a longitudinally extending potential plate region (33) adjacent the drift region (20). Alternatively, a separate potential plate region (33) or a longitudinally extending semi-insulating field plate (50) may be provided adjacent the drift region (20). The transistor is suitable for bi-directional switching.