Power semiconductor module
US7671465B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2007 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Jun 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module having an increased reliability against thermal fatigue includes a power semiconductor element, a lower-side electrode connected to the lower side of the element, a first insulating substrate connected to the upper side of the lower-side electrode and having metallic foils bonded on both surfaces thereof, an upper-side electrode connected to the upper side of the power semiconductor element, a second insulating substrate connected to the upper side of the upper-side electrode and having metallic foils bonded on both surfaces thereof, a first heat spreader connected to the lower side of the first insulating substrate, and a second heat spreader connected to the upper side of the second insulating substrate. The power semiconductor element and the first and second insulating substrates are sealed with a resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.