Nonvolatile semiconductor memory having a word line bent towards a select gate line side
US7671475B2 · kind B2 · utility
7Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2007 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Oct 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory includes a cell unit having a select gate transistor and a memory cell connected in series, a select gate line connected to the select gate transistor, and a word line connected to the memory cell. One end of the word line is bent to the select gate line side, and a fringe is connected between a bent point and a distal end of the word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.