Semiconductor device and manufacturing method thereof
US7674658B2 · kind B2 · utility
2Cited by
5References
39Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 4, 2008 |
| Grant date | Mar 9, 2010 |
| Priority date | — |
| Expiry date | Feb 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/471
Abstract
A semiconductor device and a manufacturing method thereof are provided. The manufacturing method can form a structure of a thin film transistor (TFT) having a symmetric lightly doped region, and thus provide superior operation reliability and electrical performance. In addition, the manufacturing method forms gate patterns of different TFTs by the same mask process and thereby avoids the misalignment of masks so as to improve the processing yield and reduce the manufacturing cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.