Yi-Wei Chen
192Patents
11h-index
264Co-inventors
83Inventor score
Filing activity: Jan 11, 2005 → Oct 15, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD647491S1 | Light emitting diode | General | 143 | Expired |
| US9209273B1 | Method of fabricating metal gate structure | Electricity | 39 | Active |
| US9530778B1 | Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate | Electricity | 24 | Active |
| USD646647S1 | Light emitting diode | General | 21 | Expired |
| US9048254B2 | Semiconductor structure having a metal gate with side wall spacers | Electricity | 17 | Active |
| US11818120B2 | Non-custodial tool for building decentralized computer applications | Electricity | 16 | Active |
| US8659092B2 | Complementary metal oxide semiconductor transistor and fabricating method thereof | Electricity | 16 | Active |
| USD646645S1 | Light emitting diode | General | 15 | Expired |
| US9263392B1 | Semiconductor device and method for fabricating the same | Electricity | 14 | Active |
| US8885929B2 | Abnormal behavior detection system and method using automatic classification of multiple features | Physics | 12 | Active |
| USD646646S1 | Light emitting diode | General | 11 | Expired |
| US8829511B2 | Hybrid thin film transistor, manufacturing method thereof and display panel having the same | Electricity | 10 | Active |
| US9401358B1 | Semiconductor device structure | Electricity | 10 | Active |
| US10043811B1 | Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same | Electricity | 10 | Active |
| USD646644S1 | Light emitting diode | General | 9 | Expired |
| US9385191B2 | FINFET structure | Electricity | 7 | Active |
| US9443757B1 | Semiconductor device and method for fabricating the same | Electricity | 7 | Active |
| US9698047B2 | Dummy gate technology to avoid shorting circuit | Electricity | 7 | Active |
| US9263540B1 | Metal gate structure | Electricity | 7 | Active |
| US9324610B2 | Method for fabricating semiconductor device | Electricity | 7 | Active |
| US7344978B2 | Fabrication method of semiconductor device | Electricity | 7 | Expired |
| US9530871B1 | Method for fabricating a semiconductor device | Electricity | 6 | Active |
| US10249706B1 | Semiconductor structure | Electricity | 6 | Active |
| US8547131B2 | System and method for observing threshold voltage variations | Physics | 6 | Active |
| US9230816B1 | Method for fabricating semiconductor device | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.