Nitride-based semiconductor device of reduced voltage drop
US7675076B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2006 |
| Grant date | Mar 9, 2010 |
| Priority date | — |
| Expiry date | Mar 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting device has a main semiconductor region formed via an n-type AlInGaN buffer region on a p-type silicon substrate, the latter being sufficiently electroconductive to provide part of the current path through the device. Constituting the primary working part of the LED, the main semiconductor region comprises an n-type GaN layer, an active layer, and a p-type GaN layer, which are successively epitaxially grown in that order on the buffer region. A heterojunction is created between p-type substrate and n-type buffer region. Carrier transportation from substrate to buffer region is expedited by the interface levels of the heterojunction, with a consequent reduction of the drive voltage requirement of the LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.