Photonic crystal light emitting device
US7675084B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 27, 2008 |
| Grant date | Mar 9, 2010 |
| Priority date | — |
| Expiry date | Oct 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an n-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.